mje3055t транзистора таблице PDF
MJE3055T
производитель : Wing Shing Computer Components
описание : SILICON EPITAXIAL PLANAR TRANSISTOR
MJE3055T
производитель : Semi
описание : AMPERE COMPLEMENTARY
MJE3055T
производитель : STMicro
описание : COMPLEMENTARY SILICON POWER TRANSISTORS
MJE3055T
производитель : Inchange
описание : Silicon Power Transistor
MJE3055T
производитель : WINGS[Wing Shing Computer Components]
описание : SILICON EPITAXIAL PLANAR TRANSISTOR
MJE3055T
производитель : STMICROELECTRONICS[STMicroelectronics]
описание : COMPLEMENTARY SILICON POWER TRANSISTORS
MJE3055T
производитель : Unisonic Technologies
описание : HIGH VOLTAGE TRANSISTOR
MJE3055T
производитель : Samsung semiconductor
описание : (GENERAL PURPOSE SWITCHING APPLICATIONS)
MJE3055T
производитель : Fairchild Semiconductor
описание : General Purpose Switching Applications
MJE3055T
производитель : STMicroelectronics
описание : COMPLEMENTARY SILICON POWER TRANSISTORS
MJE3055T
производитель : Motorola,
описание : AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS WATTS
MJE3055T
производитель : Mospec Semiconductor
описание : POWER TRANSISTORS(10A,60V,75W)
MJE3055T
производитель : Mospec Semiconductor
описание : POWER TRANSISTORS(10A,60V,75W)
MJE3055T
производитель : Motorola, Inc
описание : 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS
MJE3055T
производитель : STMicroelectronics
описание : COMPLEMENTARY SILICON POWER TRANSISTORS
MJE3055T
производитель : Samsung semiconductor
описание : NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)
MJE3055T
производитель : Fairchild Semiconductor
описание : General Purpose and Switching Applications
MJE3055T
производитель : STMicroelectronics
описание : COMPLEMENTARY SILICON POWER TRANSISTORS
MJE3055T
производитель : Unisonic Technologies
описание : HIGH VOLTAGE TRANSISTOR
MJE3055T
производитель : Inchange Semiconductor Company Limited
описание : isc Silicon NPN Power Transistor
MJE3055T
производитель : Savantic, Inc.
описание : Silicon NPN Power Transistors
MJE3055T
производитель : Dc Components
описание : TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
MJE3055T
производитель : ON Semiconductor
описание : Complementary Silicon Plastic Power Transistors(??????????????
MJE3055T
производитель : STMicroelectronics
описание : Complemetary Silicon Power Transistors(????????????)
MJE3055T
производитель : ETC
описание : Mini size of Discrete semiconductor elements
MJE3055T
производитель : Mospec Semiconductor
описание : POWER TRANSISTORS(10A,60V,75W)
MJE3055T
производитель : ON Semiconductor
описание : COMPLEMENTARY SILICON POWER TRANSISTORS
MJE3055T
производитель : Motorola, Inc
описание : 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS
MJE3055T
производитель : STMicroelectronics
описание : COMPLEMENTARY SILICON POWER TRANSISTORS
MJE3055T
производитель : Fairchild Semiconductor
описание : General Purpose and Switching Applications
MJE3055T
производитель : Samsung semiconductor
описание : NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS)
MJE3055T
производитель : Fairchild
описание : NPN Silicon Transistor
MJE3055T
производитель : Motorola
описание : Complementary silicon plastic power transistor
MJE3055T
производитель : WingShing
описание : Silicon epitaxial planar transistor, for use in audio and general purpose.
MJE3055T
производитель : Usha
описание : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.
MJE3055T
производитель : ST-Microelectronics
описание : COMPLEMENTARY SILICON POWER TRANSISTORS